Model: BUZ54A

Transistor

Properties:

Inclosure Material
Metal
Overall Length
Between 1.510 inches and 1.550 inches
Overall Height
Between 0.250 inches and 0.326 inches
Overall Width
Between 1.005 inches and 1.099 inches
Mounting Facility Quantity
2
Internal Configuration
Field effect
Joint Electronic Device Engineering Council/jedec/case Outline Designation
To-3
Mounting Method
Unthreaded hole
Features Provided
Hermetically sealed case
Semiconductor Material
Silicon
Voltage Rating In Volts Per Characteristic
1000.0 drain to source voltage and 1000.0 drain to gate voltage
Current Rating Per Characteristic
18.00 amperes off-state current, peak and 2.90 amperes drain current
Power Rating Per Characteristic
125.0 watts total device dissipation
Maximum Operating Tempurature Per Measurement Point
150.0 degrees celsius junction
Terminal Type And Quantity
2 pin and 1 case
NSN
5961-01-332-8083
Part Number
BUZ54A
Description
Transistor
CAGE
0B549

An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes semiconductor device, diode and semiconductor device, thyristor. For solid state devices which are responsive to visible or infrared radiant energy, see semiconductor device, photo.

Part BUZ54A NSN 5961-01-332-8083

INC
FIIG
Concept No.
App. Key
Cond. Code
Status
INC:
20588
FIIG:
A110A0
Concept No.:
App. Key:
D
Cond. Code:
1
Status:
A

Material Classification

Hazardous material, precious metals, criticality, enviroment, and electrostatic discharge indicators
HMIC
PMIC
ESD/EMI
ENAC
MMAC
CRITL
HMIC:
N
PMIC:
A
ESD:
B
ESD:
B
MMAC:
CRITL:
X

Packaging & Shipping

Est. Pack Size
Est. Pack Weight
Est. Item Weight
Est. Item Dim.
Pack Size:
--
Paclk Weight:
--
Item Weight:
--
Item Dim:
--
OPI
SPI No.
SPI Rev.
SPC Mkg.
LVL A
LVL B
OPI:
M
SPI No.:
SPI Rev.:
SPC Mkg:
39
LVL_A:
Q
LVL_B:
Q

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Schedule B and Export
  • Schedule B: 8541500080
  • SITC: 77639
  • End Use: Semiconductors
  • NAICS: 334413
  • USDA: 1

Freight Class: Semiconductor devices, nesoi

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