Model: BPW77N

Transistor

Special Features:

Lens window; high photo sensitivity; lead (pb)-free component

Properties:

Inclosure Material
Metal
Overall Length
19.6 millimeters
Terminal Length
13.2 millimeters
Overall Diameter
4.7 millimeters
Function For Which Designed
Phototransistor
Mounting Method
Terminal
Features Provided
Hermetically sealed case
Semiconductor Material
Silicon
Voltage Rating In Volts Per Characteristic
70.0 breakdown voltage, collector-to-emitter, base open
Current Rating Per Characteristic
100.00 nanoamperes zero-gate-voltage source current absolute
Power Rating Per Characteristic
250.0 milliwatts small-signal input power, common-collector preset
Terminal Type And Quantity
3 pin
NSN
5961-01-564-9795
Part Number
BPW77N
Description
Transistor
CAGE
18612

An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes semiconductor device, diode and semiconductor device, thyristor. For solid state devices which are responsive to visible or infrared radiant energy, see semiconductor device, photo.

Part BPW77N NSN 5961-01-564-9795

INC
FIIG
Concept No.
App. Key
Cond. Code
Status
INC:
20588
FIIG:
A110A0
Concept No.:
App. Key:
D
Cond. Code:
1
Status:
A

Material Classification

Hazardous material, precious metals, criticality, enviroment, and electrostatic discharge indicators
HMIC
PMIC
ESD/EMI
ENAC
MMAC
CRITL
HMIC:
N
PMIC:
A
ESD:
A
ESD:
A
MMAC:
CRITL:
X

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Schedule B and Export
  • Schedule B: 8541500080
  • SITC: 77639
  • End Use: Semiconductors
  • NAICS: 334413
  • USDA: 1

Freight Class: Semiconductor devices, nesoi

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