Model: BLW80

Transistor

Properties:

Inclosure Material
Ceramic
Overall Length
27.5 millimeters
Overall Width
7.5 millimeters
Function For Which Designed
Programmable transistor
End Application
Uhf power transistor
Voltage Rating In Volts Per Characteristic
36.0 collector to emitter voltage, dc with base short-circuited to emitter and 17.0 base to emitter voltage, dc and 4.0 emitter to base voltage, static, collector open and 0.7 collector to emitter voltage, dc
Current Rating Per Characteristic
1.00 amperes source cutoff current and 4.00 milliamperes zero-gate-voltage source current minor
Power Rating Per Characteristic
17.0 watts small-signal input power, common-emitter torr
Transfer Ratio
35.0 static forward current transfer ratio, common-emitter
Maximum Operating Tempurature Per Measurement Point
200.0 degrees celsius junction
NSN
5961-01-544-9769
Part Number
BLW80
Description
Transistor
CAGE
18324

An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes semiconductor device, diode and semiconductor device, thyristor. For solid state devices which are responsive to visible or infrared radiant energy, see semiconductor device, photo.

Part BLW80 NSN 5961-01-544-9769

INC
FIIG
Concept No.
App. Key
Cond. Code
Status
INC:
20588
FIIG:
A110A0
Concept No.:
App. Key:
D
Cond. Code:
1
Status:
A

Material Classification

Hazardous material, precious metals, criticality, enviroment, and electrostatic discharge indicators
HMIC
PMIC
ESD/EMI
ENAC
MMAC
CRITL
HMIC:
N
PMIC:
A
ESD:
A
ESD:
A
MMAC:
CRITL:
X

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Schedule B and Export
  • Schedule B: 8541500080
  • SITC: 77639
  • End Use: Semiconductors
  • NAICS: 334413
  • USDA: 1

Freight Class: Semiconductor devices, nesoi

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