Model: BD529

Transistor

Special Features:

Junction pattern arrangement: npn

Properties:

Inclosure Material
Metal
Overall Length
26.0 millimeters
Terminal Length
Between 12.0 millimeters and 12.7 millimeters
Overall Width
Between 6.6 millimeters and 7.2 millimeters
Internal Configuration
Junction contact
Mounting Method
Terminal
Terminal Circle Diameter
0.4 millimeters
Semiconductor Material
Silicon
Voltage Rating In Volts Per Characteristic
100.0 breakdown voltage, collector-to-base, emitter open and 100.0 breakdown voltage, collector-to-emitter, base open
Current Rating Per Characteristic
100.00 nanoamperes zero-gate-voltage source current preset
Transfer Ratio
60.0 static forward current transfer ratio, common-emitter and 115.0 static forward current transfer ratio, common-emitter
Maximum Operating Tempurature Per Measurement Point
150.0 degrees celsius ambient air
Terminal Type And Quantity
3 tab w/wire lead
NSN
5961-01-386-3021
Part Number
BD529
Description
Transistor
CAGE
04713

An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes semiconductor device, diode and semiconductor device, thyristor. For solid state devices which are responsive to visible or infrared radiant energy, see semiconductor device, photo.

Part BD529 NSN 5961-01-386-3021

INC
FIIG
Concept No.
App. Key
Cond. Code
Status
INC:
20588
FIIG:
A110A0
Concept No.:
App. Key:
D
Cond. Code:
1
Status:
A

Material Classification

Hazardous material, precious metals, criticality, enviroment, and electrostatic discharge indicators
HMIC
PMIC
ESD/EMI
ENAC
MMAC
CRITL
HMIC:
N
PMIC:
A
ESD:
A
ESD:
A
MMAC:
CRITL:
X

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Schedule B and Export
  • Schedule B: 8541500080
  • SITC: 77639
  • End Use: Semiconductors
  • NAICS: 334413
  • USDA: 1

Freight Class: Semiconductor devices, nesoi

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