Model: BCP56T1G

Transistor

Special Features:

Lea (pb) free; npn silicon epitaxial transistor; 1000/tape and reel; operating and storage temp range: m65.0/p150.0 degrees c

Properties:

Inclosure Material
Plastic
Overall Length
Between 0.249 inches and 0.263 inches
Terminal Length
0.069 inches
Overall Height
Between 0.060 inches and 0.068 inches
Overall Width
Between 0.130 inches and 0.145 inches
Function For Which Designed
Amplifier
End Application
Vhf fm/fh; general hellenic staff
Mounting Facility Quantity
1
Mounting Method
Slot
Semiconductor Material
Silicon
Voltage Rating In Volts Per Characteristic
80.0 collector to emitter voltage, dc
Current Rating Per Characteristic
1.00 amperes collector current, dc
Power Rating Per Characteristic
1.5 watts total power dissipation
Part Name Assigned By Controlling Agency
Medium power npn silicon high current transistor surface mount
Terminal Type And Quantity
3 tab, solder lug
NSN
5961-01-580-6887
Part Number
BCP56T1G
Description
Transistor
CAGE
1MQ07

An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes semiconductor device, diode and semiconductor device, thyristor. For solid state devices which are responsive to visible or infrared radiant energy, see semiconductor device, photo.

Part BCP56T1G NSN 5961-01-580-6887

INC
FIIG
Concept No.
App. Key
Cond. Code
Status
INC:
20588
FIIG:
A110A0
Concept No.:
App. Key:
D
Cond. Code:
1
Status:
A

Material Classification

Hazardous material, precious metals, criticality, enviroment, and electrostatic discharge indicators
HMIC
PMIC
ESD/EMI
ENAC
MMAC
CRITL
HMIC:
N
PMIC:
A
ESD:
B
ESD:
B
MMAC:
CRITL:
X

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Schedule B and Export
  • Schedule B: 8541500080
  • SITC: 77639
  • End Use: Semiconductors
  • NAICS: 334413
  • USDA: 1

Freight Class: Semiconductor devices, nesoi

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