Model: BAV99LT1G

Diode Semiconductor Device

Properties:

Overall Length
0.114 inches
Overall Height
0.040 inches
Overall Width
0.094 inches
Function For Which Designed
Switching
Mounting Method
Terminal
Voltage Rating In Volts Per Characteristic
70.0 forward gate to source breakdown voltage peak and 70.0 forward gate to source breakdown voltage
Current Rating Per Characteristic
450.00 milliamperes forward current, peak total value
Part Name Assigned By Controlling Agency
Dual switching diode
Terminal Type And Quantity
3 uninsulated wire lead
NSN
5961-01-577-2777
Part Number
BAV99LT1G
Description
Semiconductor Device,diode
CAGE
1MQ07

A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes light emitting diode and semiconductor device,photo. For items containing material such as selenium and copper oxide, see recifier, metallic.

Part BAV99LT1G NSN 5961-01-577-2777

INC
FIIG
Concept No.
App. Key
Cond. Code
Status
INC:
20589
FIIG:
A110A0
Concept No.:
1
App. Key:
B
Cond. Code:
1
Status:
A

Material Classification

Hazardous material, precious metals, criticality, enviroment, and electrostatic discharge indicators
HMIC
PMIC
ESD/EMI
ENAC
MMAC
CRITL
HMIC:
N
PMIC:
A
ESD:
A
ESD:
A
MMAC:
CRITL:
X

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Schedule B and Export
  • Schedule B: 8541100070
  • SITC: 77631
  • End Use: Semiconductors
  • NAICS: 334413
  • USDA: 1

Freight Class: Diodes, other than photosensitve or led, with a maximum current of 0.5 a or less

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