Model: BAS21LT1

Diode Semiconductor Device

Properties:

Inclosure Material
Ceramic
Overall Length
3.040 millimeters
Terminal Length
2.040 millimeters
Overall Height
1.110 millimeters
Overall Width
2.500 millimeters
Mounting Facility Quantity
3
Mounting Method
Compression
Semiconductor Material
Silicon
Voltage Rating In Volts Per Characteristic
250.0 reverse voltage, instantaneous
Current Rating Per Characteristic
200.00 milliamperes source cutoff current preset and 625.00 milliamperes repetitive peak forward current universal
Power Rating Per Characteristic
225.0 milliwatts small-signal input power, common-emitter peak
Capacitance Rating In Picofarads
5.0
Maximum Operating Tempurature Per Measurement Point
150.0 degrees celsius junction and -55.0 degrees celsius junction
Terminal Type And Quantity
3 tab, solder lug
NSN
5961-01-480-5683
Part Number
BAS21LT1
Description
Semiconductor Device,diode
CAGE
04713

A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes light emitting diode and semiconductor device,photo. For items containing material such as selenium and copper oxide, see recifier, metallic.

Part BAS21LT1 NSN 5961-01-480-5683

INC
FIIG
Concept No.
App. Key
Cond. Code
Status
INC:
20589
FIIG:
A110A0
Concept No.:
1
App. Key:
B
Cond. Code:
1
Status:
A

Material Classification

Hazardous material, precious metals, criticality, enviroment, and electrostatic discharge indicators
HMIC
PMIC
ESD/EMI
ENAC
MMAC
CRITL
HMIC:
N
PMIC:
A
ESD:
A
ESD:
A
MMAC:
EH
CRITL:
X

Freight Classification

NMFC
UFC
LTL
LCL
WCC
TCC
SHC
ACC
NMFC:
063025
UFC:
34525
LTL:
RATING VARIABLE
LCL:
--
WCC:
72D
TCC:
Z
SHC:
9
ACC:
Instruments/Radio

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Schedule B and Export
  • Schedule B: 8541100070
  • SITC: 77631
  • End Use: Semiconductors
  • NAICS: 334413
  • USDA: 1

Freight Class: Diodes, other than photosensitve or led, with a maximum current of 0.5 a or less

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