Model: APT8075BN

Transistor

Properties:

Inclosure Material
Metal
Overall Length
Between 0.819 inches and 0.845 inches
Terminal Length
Between 0.780 inches and 0.800 inches
Overall Height
Between 0.185 inches and 0.209 inches
Overall Width
Between 0.610 inches and 0.640 inches
Internal Configuration
Field effect-dual gate
Mounting Method
Terminal
Terminal Circle Diameter
Between 0.016 inches and 0.031 inches
Semiconductor Material
Silicon
Voltage Rating In Volts Per Characteristic
800.0 drain to source voltage
Current Rating Per Characteristic
13.00 amperes source cutoff current of standard range
Power Rating Per Characteristic
310.0 watts small-signal input power, common-collector preset
Maximum Operating Tempurature Per Measurement Point
150.0 degrees celsius junction
Terminal Type And Quantity
3 uninsulated wire lead
NSN
5961-01-493-9159
Part Number
APT8075BN
Description
Transistor
CAGE
0DY74

An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes semiconductor device, diode and semiconductor device, thyristor. For solid state devices which are responsive to visible or infrared radiant energy, see semiconductor device, photo.

Part APT8075BN NSN 5961-01-493-9159

INC
FIIG
Concept No.
App. Key
Cond. Code
Status
INC:
20588
FIIG:
A110A0
Concept No.:
App. Key:
D
Cond. Code:
1
Status:
A

Material Classification

Hazardous material, precious metals, criticality, enviroment, and electrostatic discharge indicators
HMIC
PMIC
ESD/EMI
ENAC
MMAC
CRITL
HMIC:
N
PMIC:
A
ESD:
A
ESD:
A
MMAC:
CRITL:
X

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Schedule B and Export
  • Schedule B: 8541500080
  • SITC: 77639
  • End Use: Semiconductors
  • NAICS: 334413
  • USDA: 1

Freight Class: Semiconductor devices, nesoi

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