Special Features:

Pulsed drain current: 90 amps; gate-source voltage: plus or minus 30 volts; total power dissipation at tc equals 25 degree celsuis: minus 55 to 150 degree celsuis; inductive current clamped: 90 amps; pulsed source current (body diode): 90 amps

Properties:

An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes semiconductor device, diode and semiconductor device, thyristor. For solid state devices which are responsive to visible or infrared radiant energy, see semiconductor device, photo.