Model: APT4020AN

Transistor

Special Features:

Pulsed drain current: 90 amps; gate-source voltage: plus or minus 30 volts; total power dissipation at tc equals 25 degree celsuis: minus 55 to 150 degree celsuis; inductive current clamped: 90 amps; pulsed source current (body diode): 90 amps

Properties:

Overall Length
Between 38.6 millimeters and 39.1 millimeters
Overall Height
Between 14.2 millimeters and 31.8 millimeters
Overall Width
Between 25.1 millimeters and 26.6 millimeters
End Application
Allison transmission div allison transmission; aerospace systems
Mounting Facility Quantity
2
Mounting Method
Unthreaded hole
Voltage Rating In Volts Per Characteristic
400.0 drain to source voltage
Current Rating Per Characteristic
22.50 amperes on-state drain current
Part Name Assigned By Controlling Agency
Power mos iv
NSN
5961-01-581-0640
Part Number
APT4020AN
Description
Transistor
CAGE
1CSP7

An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes semiconductor device, diode and semiconductor device, thyristor. For solid state devices which are responsive to visible or infrared radiant energy, see semiconductor device, photo.

Part APT4020AN NSN 5961-01-581-0640

INC
FIIG
Concept No.
App. Key
Cond. Code
Status
INC:
20588
FIIG:
A110A0
Concept No.:
App. Key:
D
Cond. Code:
1
Status:
A

Material Classification

Hazardous material, precious metals, criticality, enviroment, and electrostatic discharge indicators
HMIC
PMIC
ESD/EMI
ENAC
MMAC
CRITL
HMIC:
N
PMIC:
A
ESD:
A
ESD:
A
MMAC:
CRITL:
X

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Schedule B and Export
  • Schedule B: 8541500080
  • SITC: 77639
  • End Use: Semiconductors
  • NAICS: 334413
  • USDA: 1

Freight Class: Semiconductor devices, nesoi

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