Model: A3634

Unitized Semiconductor Devices

Special Features:

Common emitter; all transistor junction pattern arrangement: npn

Properties:

Inclosure Material
Plastic
Overall Length
Between 0.745 inches and 0.870 inches
Terminal Length
0.115 inches
Overall Height
0.210 inches
Overall Width
Between 0.240 inches and 0.260 inches
Component Name And Quantity
7 transistor
Mounting Method
Terminal
Semiconductor Material
Silicon all transistor
Voltage Rating In Volts Per Characteristic
20.0 collector to base voltage/static/emitter open all transistor and 16.0 collector to emitter voltage/static/base open all transistor and 5.0 emitter to base voltage, static, collector open all transistor
Current Rating Per Characteristic
20.00 milliamperes source cutoff current all transistor and 100.00 milliamperes source cutoff current all transistor
Power Rating Per Characteristic
750.0 milliwatts small-signal input power, common-collector absolute all transistor
Test Data Document
13499-351-7802 drawing (this is the basic governing drawing, such as a contractor drawing, original equipment manufacturer drawing, etc.; excludes any specification, standard or other document that may be referenced in a basic governing drawing)
Terminal Type And Quantity
16 printed circuit
NSN
5961-00-200-1990
Part Number
A3634
Description
Semiconductor Devices,unitized
CAGE
81535

Two or more discrete semiconductor devices such as diode(s) and/or transistor(s), permanently cased, encapsulated, or potted together to form an inseparable unit. Excludes devices having one or more components other than semiconductor devices. The individually distinct devices forming the unit may be internally connected. The unit in itself does not perform a complete specific function and cannot be assigned a more definite item name. It may include or consist of inseparable matched pairs. May or may not include mounting hardware and/or heatsink. For interconnected items arranged in stack(s), see rectifier, semiconductor device. For items formed on or within a semiconductor material substrate, formed on an insulating substrate or formed on a combination of both of these types, see microcircuit (as modified). Excludes network (as modified); absorber, overvoltage; semiconductor device set; and semiconductor device assembly. Do not use if more specific name applies.

Part A3634 NSN 5961-00-200-1990

INC
FIIG
Concept No.
App. Key
Cond. Code
Status
INC:
61962
FIIG:
A110A0
Concept No.:
App. Key:
E
Cond. Code:
1
Status:
A

Material Classification

Hazardous material, precious metals, criticality, enviroment, and electrostatic discharge indicators
HMIC
PMIC
ESD/EMI
ENAC
MMAC
CRITL
HMIC:
N
PMIC:
A
ESD:
B
ESD:
B
MMAC:
EH
CRITL:
X

Packaging & Shipping

Est. Pack Size
Est. Pack Weight
Est. Item Weight
Est. Item Dim.
Pack Size:
--
Paclk Weight:
0.1000lbs
Item Weight:
--
Item Dim:
--
OPI
SPI No.
SPI Rev.
SPC Mkg.
LVL A
LVL B
OPI:
M
SPI No.:
SPI Rev.:
SPC Mkg:
ZZ
LVL_A:
Q
LVL_B:
Q

Freight Classification

NMFC
UFC
LTL
LCL
WCC
TCC
SHC
ACC
NMFC:
061700
UFC:
34580
LTL:
RATING VARIABLE
LCL:
--
WCC:
658
TCC:
Z
SHC:
5
ACC:
Instruments/Radio

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Schedule B and Export
  • Schedule B: 8541500080
  • SITC: 77639
  • End Use: Semiconductors
  • NAICS: 334413
  • USDA: 1

Freight Class: Semiconductor devices, nesoi

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