Model: 9337 230 50682

Transistor

Properties:

Inclosure Material
Metal
Overall Length
Between 0.170 inches and 0.210 inches
Terminal Length
0.500 inches
Overall Diameter
Between 0.209 inches and 0.230 inches
Internal Configuration
Field effect-dual gate
Joint Electronic Device Engineering Council/jedec/case Outline Designation
T0.72
Mounting Method
Terminal
Terminal Circle Diameter
0.100 inches
Features Provided
Hermetically sealed case
Semiconductor Material
Silicon
Voltage Rating In Volts Per Characteristic
25.0 breakdown voltage, drain-to-source, with all other terminals short-circuited to source and 4.0 gate to source threshold voltage
Current Rating Per Characteristic
50.00 milliamperes zero-gate-voltage source current megawatts
Power Rating Per Characteristic
360.0 milliwatts small-signal input power, common-collector absolute
Terminal Type And Quantity
4 uninsulated wire lead
NSN
5961-01-066-7178
Part Number
9337 230 50682
Description
Transistor
CAGE
F6170

An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes semiconductor device, diode and semiconductor device, thyristor. For solid state devices which are responsive to visible or infrared radiant energy, see semiconductor device, photo.

Part 9337 230 50682 NSN 5961-01-066-7178

INC
FIIG
Concept No.
App. Key
Cond. Code
Status
INC:
20588
FIIG:
A110A0
Concept No.:
App. Key:
D
Cond. Code:
1
Status:
A

Material Classification

Hazardous material, precious metals, criticality, enviroment, and electrostatic discharge indicators
HMIC
PMIC
ESD/EMI
ENAC
MMAC
CRITL
HMIC:
N
PMIC:
A
ESD:
B
ESD:
B
MMAC:
CRITL:
X

Freight Classification

NMFC
UFC
LTL
LCL
WCC
TCC
SHC
ACC
NMFC:
063025
UFC:
34525
LTL:
RATING VARIABLE
LCL:
100.0
WCC:
658
TCC:
3
SHC:
9
ACC:
Instruments/Radio

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Schedule B and Export
  • Schedule B: 8541500080
  • SITC: 77639
  • End Use: Semiconductors
  • NAICS: 334413
  • USDA: 1

Freight Class: Semiconductor devices, nesoi

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