Model: 9330-971-90112

Thyristor Semiconductor Device

Properties:

Inclosure Material
Ceramic and metal
Overall Length
0.350 inches
Mounting Facility Quantity
1
Mounting Method
Threaded stud
Thread Size
0.190 inches
Semiconductor Material
Silicon
Voltage Rating In Volts Per Characteristic
600.0 off-state voltage, rms total
Current Rating Per Characteristic
14.00 amperes drain current nanoamperes
Maximum Operating Tempurature Per Measurement Point
129.0 degrees celsius junction
Thread Series Designator
Unf
Terminal Type And Quantity
2 tab, solder lug and 1 threaded stud
NSN
5961-00-552-1663
Part Number
9330-971-90112
Description
Semiconductor Device,thyristor
CAGE

A bistable semiconductor device comprising three or more junctions which is normally a nonconductor until the application of a signal to a gate terminal, at which time the device switches to the conductive state. Includes devices capable of being switched back to the nonconductive state upon application of a different signal to the same or another gate terminal. May or may not include mounting hardware and/or heatsink. For solid state devices which are responsive to visible or infrared radiant energy, see semiconductor device, photo.

Part 9330-971-90112 NSN 5961-00-552-1663

INC
FIIG
Concept No.
App. Key
Cond. Code
Status
INC:
33096
FIIG:
A110A0
Concept No.:
1
App. Key:
D
Cond. Code:
1
Status:
A

Material Classification

Hazardous material, precious metals, criticality, enviroment, and electrostatic discharge indicators
HMIC
PMIC
ESD/EMI
ENAC
MMAC
CRITL
HMIC:
N
PMIC:
U
ESD:
A
ESD:
A
MMAC:
CRITL:
X

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Schedule B and Export
  • Schedule B: 8541300080
  • SITC: 77635
  • End Use: Semiconductors
  • NAICS: 334413
  • USDA: 1

Freight Class: Thyristors, diacs & triacs, other than photosensitive devices, nesoi

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