Model: 91307871

Transistor

Special Features:

Junction pattern arrangement: pnp

Properties:

Inclosure Material
Metal
Overall Length
0.250 inches
Terminal Length
1.500 inches
Overall Diameter
Between 0.335 inches and 0.370 inches
Internal Configuration
Junction contact
Joint Electronic Device Engineering Council/jedec/case Outline Designation
T0-5
Mounting Method
Terminal
Terminal Circle Diameter
Between 0.016 inches and 0.021 inches
Semiconductor Material
Silicon
Voltage Rating In Volts Per Characteristic
325.0 breakdown voltage, collector-to-base, emitter open and 5.0 breakdown voltage, emitter-to-base, collector open and 300.0 breakdown voltage, collector-to-emitter, base open
Current Rating Per Characteristic
400.00 milliamperes source cutoff current and 50.00 milliamperes source cutoff current
Power Rating Per Characteristic
1.0 watts small-signal input power, common-collector
Transfer Ratio
25.0 static forward current transfer ratio, common-emitter and 50.0 static forward current transfer ratio, common-emitter
Maximum Operating Tempurature Per Measurement Point
200.0 degrees celsius ambient air
Terminal Type And Quantity
3 pin
NSN
5961-01-242-6115
Part Number
91307871
Description
Transistor
CAGE
F6481

An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes semiconductor device, diode and semiconductor device, thyristor. For solid state devices which are responsive to visible or infrared radiant energy, see semiconductor device, photo.

Part 91307871 NSN 5961-01-242-6115

INC
FIIG
Concept No.
App. Key
Cond. Code
Status
INC:
20588
FIIG:
A110A0
Concept No.:
App. Key:
D
Cond. Code:
1
Status:
A

Material Classification

Hazardous material, precious metals, criticality, enviroment, and electrostatic discharge indicators
HMIC
PMIC
ESD/EMI
ENAC
MMAC
CRITL
HMIC:
N
PMIC:
U
ESD:
A
ESD:
A
MMAC:
CRITL:
X

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Schedule B and Export
  • Schedule B: 8541500080
  • SITC: 77639
  • End Use: Semiconductors
  • NAICS: 334413
  • USDA: 1

Freight Class: Semiconductor devices, nesoi

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