Model: 8879600001-1

Thyristor Semiconductor Device

Special Features:

Junction pattern arrangement: pnpn

Properties:

Inclosure Material
Glass and metal
Overall Length
0.404 inches
Overall Diameter
Between 0.501 inches and 0.510 inches
Internal Configuration
Junction contact
Electrode Internally-electrically Connected To Case
Anode
Mounting Method
Terminal
Features Provided
Hermetically sealed case
Semiconductor Material
Silicon
Voltage Rating In Volts Per Characteristic
480.0 nonrepetitive peak reverse voltage, peak total value and 400.0 repetitive peak reverse voltage, peak total value and 400.0 breakover voltage, dc and 2.0 gate trigger voltage, dc
Current Rating Per Characteristic
900.00 amperes source cutoff current absolute and 35.00 amperes forward current, average of standard range and 10.00 milliamperes forward current, average universal and 80.00 milliamperes forward current, total rms preset and 70.00 milliamperes forward current, total rms peak
Current Rating Per Characteristic
900.00 amperes forward current, peak total value and 35.00 amperes forward current, total rms and 10.00 milliamperes breakover current, dc and 80.00 milliamperes gate trigger current, dc and 70.00 milliamperes holding current, dc
Power Rating Per Characteristic
30.0 watts small-signal input power, common-collector absolute
Power Rating Per Characteristic
30.0 watts total device dissipation
Maximum Operating Tempurature Per Measurement Point
125.0 degrees celsius ambient air
Test Data Document
50985-8879600001 drawing (this is the basic governing drawing, such as a contractor drawing, original equipment manufacturer drawing, etc.; excludes any specification, standard or other document that may be referenced in a basic governing drawing)
Terminal Type And Quantity
2 solder stud and 1 case
NSN
5961-00-402-8161
Part Number
8879600001-1
Description
Semiconductor Device,thyristor
CAGE
57057

A bistable semiconductor device comprising three or more junctions which is normally a nonconductor until the application of a signal to a gate terminal, at which time the device switches to the conductive state. Includes devices capable of being switched back to the nonconductive state upon application of a different signal to the same or another gate terminal. May or may not include mounting hardware and/or heatsink. For solid state devices which are responsive to visible or infrared radiant energy, see semiconductor device, photo.

Part 8879600001-1 NSN 5961-00-402-8161

INC
FIIG
Concept No.
App. Key
Cond. Code
Status
INC:
33096
FIIG:
A110A0
Concept No.:
1
App. Key:
D
Cond. Code:
1
Status:
A

Material Classification

Hazardous material, precious metals, criticality, enviroment, and electrostatic discharge indicators
HMIC
PMIC
ESD/EMI
ENAC
MMAC
CRITL
HMIC:
N
PMIC:
U
ESD:
ESD:
MMAC:
CRITL:
X

Packaging & Shipping

Est. Pack Size
Est. Pack Weight
Est. Item Weight
Est. Item Dim.
Pack Size:
--
Paclk Weight:
--
Item Weight:
--
Item Dim:
--
OPI
SPI No.
SPI Rev.
SPC Mkg.
LVL A
LVL B
OPI:
O
SPI No.:
SPI Rev.:
SPC Mkg:
ZZ
LVL_A:
E
LVL_B:
Q

Freight Classification

NMFC
UFC
LTL
LCL
WCC
TCC
SHC
ACC
NMFC:
063025
UFC:
34525
LTL:
RATING VARIABLE
LCL:
--
WCC:
72D
TCC:
Z
SHC:
9
ACC:
Instruments/Radio

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Schedule B and Export
  • Schedule B: 8541300080
  • SITC: 77635
  • End Use: Semiconductors
  • NAICS: 334413
  • USDA: 1

Freight Class: Thyristors, diacs & triacs, other than photosensitive devices, nesoi

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