Model: 87001F1267

Transistor

Properties:

Inclosure Material
Metal
Overall Length
0.155 inches
Terminal Length
0.500 inches
Overall Diameter
0.230 inches
Internal Configuration
Field effect
Joint Electronic Device Engineering Council/jedec/case Outline Designation
To-52
Mounting Method
Terminal
Features Provided
Electrostatic sensitive
Semiconductor Material
Silicon
Voltage Rating In Volts Per Characteristic
-60.0 drain to source voltage and -60.0 drain to gate voltage
Current Rating Per Characteristic
-250.00 milliamperes drain current
Power Rating Per Characteristic
1.0 watts total power dissipation
Maximum Operating Tempurature Per Measurement Point
150.0 degrees celsius ambient air
Terminal Type And Quantity
3 uninsulated wire lead
NSN
5961-01-371-4769
Part Number
87001F1267
Description
Transistor
CAGE
01365

An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes semiconductor device, diode and semiconductor device, thyristor. For solid state devices which are responsive to visible or infrared radiant energy, see semiconductor device, photo.

Part 87001F1267 NSN 5961-01-371-4769

INC
FIIG
Concept No.
App. Key
Cond. Code
Status
INC:
20588
FIIG:
A110A0
Concept No.:
App. Key:
D
Cond. Code:
1
Status:
A

Material Classification

Hazardous material, precious metals, criticality, enviroment, and electrostatic discharge indicators
HMIC
PMIC
ESD/EMI
ENAC
MMAC
CRITL
HMIC:
N
PMIC:
A
ESD:
B
ESD:
B
MMAC:
CRITL:
X

Packaging & Shipping

Est. Pack Size
Est. Pack Weight
Est. Item Weight
Est. Item Dim.
Pack Size:
--
Paclk Weight:
--
Item Weight:
--
Item Dim:
--
OPI
SPI No.
SPI Rev.
SPC Mkg.
LVL A
LVL B
OPI:
M
SPI No.:
SPI Rev.:
SPC Mkg:
ZZ
LVL_A:
Q
LVL_B:
Q

Freight Classification

NMFC
UFC
LTL
LCL
WCC
TCC
SHC
ACC
NMFC:
063025
UFC:
34525
LTL:
RATING VARIABLE
LCL:
--
WCC:
72D
TCC:
3
SHC:
9
ACC:
Instruments/Radio

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Schedule B and Export
  • Schedule B: 8541500080
  • SITC: 77639
  • End Use: Semiconductors
  • NAICS: 334413
  • USDA: 1

Freight Class: Semiconductor devices, nesoi

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