Model: 86BB175

Transistor

Special Features:

Junction pattern arrangement: npn

Properties:

Inclosure Material
Metal
Overall Length
0.460 inches
Overall Height
0.460 inches
Overall Diameter
0.687 inches
End Application
Automated radar terminal system (arts2e)
Mounting Facility Quantity
1
Internal Configuration
Junction contact
Electrode Internally-electrically Connected To Case
Collector
Mounting Method
Threaded stud
Features Provided
Hermetically sealed case
Thread Size
0.250 inches
Semiconductor Material
Silicon
Voltage Rating In Volts Per Characteristic
100.0 breakdown voltage, collector-to-base, emitter open
Current Rating Per Characteristic
15.00 amperes source cutoff current
Power Rating Per Characteristic
100.0 watts small-signal input power, common-collector absolute
Thread Series Designator
Unf
Terminal Type And Quantity
3 tab, solder lug
NSN
5961-01-039-8731
Part Number
86BB175
Description
Transistor
CAGE
21845

An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes semiconductor device, diode and semiconductor device, thyristor. For solid state devices which are responsive to visible or infrared radiant energy, see semiconductor device, photo.

Part 86BB175 NSN 5961-01-039-8731

INC
FIIG
Concept No.
App. Key
Cond. Code
Status
INC:
20588
FIIG:
A110A0
Concept No.:
App. Key:
D
Cond. Code:
1
Status:
A

Material Classification

Hazardous material, precious metals, criticality, enviroment, and electrostatic discharge indicators
HMIC
PMIC
ESD/EMI
ENAC
MMAC
CRITL
HMIC:
N
PMIC:
U
ESD:
ESD:
MMAC:
CRITL:
X

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Schedule B and Export
  • Schedule B: 8541500080
  • SITC: 77639
  • End Use: Semiconductors
  • NAICS: 334413
  • USDA: 1

Freight Class: Semiconductor devices, nesoi

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