Model: 83CNQ100A
Diode Semiconductor DeviceSpecial Features:
2high purity; high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance; low forward voltage drop; up to 175 degrees celcius junction temperature; guard ring for enhanced ruggedness and long term reliability
Properties:
A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes light emitting diode and semiconductor device,photo. For items containing material such as selenium and copper oxide, see recifier, metallic.
Part 83CNQ100A NSN 5961-01-501-4451
Material Classification
Hazardous material, precious metals, criticality, enviroment, and electrostatic discharge indicatorsPackaging & Shipping
Freight Classification
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Schedule B and Export
- Schedule B: 8541100070
- SITC: 77631
- End Use: Semiconductors
- NAICS: 334413
- USDA: 1
Freight Class: Diodes, other than photosensitve or led, with a maximum current of 0.5 a or less
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