Model: 82RM100

Thyristor Semiconductor Device

Properties:

Overall Length
2.637 inches
Terminal Length
0.812 inches
Mounting Facility Quantity
1
Joint Electronic Device Engineering Council/jedec/case Outline Designation
T0-83
Mounting Method
Threaded stud
Overall Width Across Flats
1.047 inches
Thread Size
0.500 inches
Voltage Rating In Volts Per Characteristic
100.0 repetitive peak reverse voltage and 1200.0 repetitive peak reverse voltage
Current Rating Per Characteristic
125.00 amperes forward current, total rms horsepower metric
Maximum Operating Tempurature Per Measurement Point
125.0 degrees celsius junction
Thread Series Designator
Unf
Terminal Type And Quantity
2 tab, solder lug and 1 threaded stud
NSN
5961-01-183-3558
Part Number
82RM100
Description
Semiconductor Device,thyristor
CAGE
59993

A bistable semiconductor device comprising three or more junctions which is normally a nonconductor until the application of a signal to a gate terminal, at which time the device switches to the conductive state. Includes devices capable of being switched back to the nonconductive state upon application of a different signal to the same or another gate terminal. May or may not include mounting hardware and/or heatsink. For solid state devices which are responsive to visible or infrared radiant energy, see semiconductor device, photo.

Part 82RM100 NSN 5961-01-183-3558

INC
FIIG
Concept No.
App. Key
Cond. Code
Status
INC:
33096
FIIG:
A110A0
Concept No.:
1
App. Key:
D
Cond. Code:
1
Status:
A

Material Classification

Hazardous material, precious metals, criticality, enviroment, and electrostatic discharge indicators
HMIC
PMIC
ESD/EMI
ENAC
MMAC
CRITL
HMIC:
N
PMIC:
U
ESD:
A
ESD:
A
MMAC:
CRITL:
X

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Schedule B and Export
  • Schedule B: 8541300080
  • SITC: 77635
  • End Use: Semiconductors
  • NAICS: 334413
  • USDA: 1

Freight Class: Thyristors, diacs & triacs, other than photosensitive devices, nesoi

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