Model: 81RIA120

Thyristor Semiconductor Device

Properties:

Inclosure Material
Glass and metal
Mounting Facility Quantity
1
Mounting Method
Threaded stud
Overall Width Across Flats
1.160 inches
Thready Qty Per Inch (tpi)
20
Thread Size
0.500 inches
Voltage Rating In Volts Per Characteristic
1200.0 repetitive peak off-state voltage
Current Rating Per Characteristic
80.00 amperes forward current, total rms universal
Maximum Operating Tempurature Per Measurement Point
85.0 degrees celsius case
Thread Series Designator
Unf
Terminal Type And Quantity
1 threaded stud and 2 insulated wire lead
NSN
5961-01-464-2652
Part Number
81RIA120
Description
Semiconductor Device,thyristor
CAGE

A bistable semiconductor device comprising three or more junctions which is normally a nonconductor until the application of a signal to a gate terminal, at which time the device switches to the conductive state. Includes devices capable of being switched back to the nonconductive state upon application of a different signal to the same or another gate terminal. May or may not include mounting hardware and/or heatsink. For solid state devices which are responsive to visible or infrared radiant energy, see semiconductor device, photo.

Part 81RIA120 NSN 5961-01-464-2652

INC
FIIG
Concept No.
App. Key
Cond. Code
Status
INC:
33096
FIIG:
A110A0
Concept No.:
1
App. Key:
D
Cond. Code:
1
Status:
A

Material Classification

Hazardous material, precious metals, criticality, enviroment, and electrostatic discharge indicators
HMIC
PMIC
ESD/EMI
ENAC
MMAC
CRITL
HMIC:
N
PMIC:
A
ESD:
A
ESD:
A
MMAC:
CRITL:
X

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Schedule B and Export
  • Schedule B: 8541300080
  • SITC: 77635
  • End Use: Semiconductors
  • NAICS: 334413
  • USDA: 1

Freight Class: Thyristors, diacs & triacs, other than photosensitive devices, nesoi

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