Special Features:

Three phase bridges; hight efficiency; max forward voltage drop 0.95v at 10a; five turret terminals; 2.240 in. Min 2.260 in. Max lg; 0.740 in. Min 0.760 in. Max w; 0.820 in. Max h

Properties:

Two or more diode semiconductor devices designed to function as a unit in changing alternating current to direct current. The diode devices are internally connected in series, and are permanently cased, encapsulated, potted, or molded together to form an inseparable unit. These units may be designed as either half-wave or full-wave rectifiers and may be mounted to form either single phase or three phase bridges. For interconnected items arranged in stack(s), see rectifier, semiconductor device. For items fabricated in the form of a monolithic or thin film structure that perform the function of a circuit, see integrated circuit (as modified). Excludes semiconductor devices, unitized; semiconductor device assembly; and rectifier network, unitized.