Model: 6P005
Photo Semiconductor DeviceSpecial Features:
Fixed position mounting; temperature range: -40 to +158 degrees f; ballast amps is 8.3; watts is 1800; voltage rating is 120 volts; depth is 13/16in.; housing constructed of high impact polycarbonate; components shall consist of a metal film resistor, dual temperature compensating bi-metal blades, snap action contact blades, chemically treated/polymer encapsulated cadmium sulfide photocell and silver alloy contacts
Properties:
A semiconductor device (1) which is responsive to visible or infrared radiant energy. May or may not include mounting hardware and/or heat sink. Excludes semiconductor device (1), diode; semiconductor device (1), thyristor and transistor. For solid state devices which emit visible or infrared radiant energy, see light emitting diode.
Part 6P005 NSN 5961-01-271-8634
Material Classification
Hazardous material, precious metals, criticality, enviroment, and electrostatic discharge indicatorsPackaging & Shipping
Freight Classification
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Schedule B and Export
- Schedule B: 8541409500
- SITC: 77637
- End Use: Semiconductors
- NAICS: 334413
- USDA: 1
Freight Class: Photosensitive semiconductor devices, nesoi
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