Model: 669261-1

Transistor
Description:

Ceramic inclosure material, 0.682 inches overall length, 0.281 inches overall diameter, 1 mounting facility quantity, junction contact internal configuration.

Special Features:

Junction pattern arrangement: npn

Properties:

Inclosure Material
Ceramic and metal
Overall Length
0.682 inches
Overall Diameter
0.281 inches
Mounting Facility Quantity
1
Internal Configuration
Junction contact
Electrode Internally-electrically Connected To Case
Collector
Mounting Method
Threaded stud
Features Provided
Hermetically sealed case
Thread Size
0.164 inches
Semiconductor Material
Silicon
Voltage Rating In Volts Per Characteristic
50.0 breakdown voltage, collector-to-base, emitter open
Current Rating Per Characteristic
200.00 milliamperes source cutoff current
Power Rating Per Characteristic
5.0 watts small-signal input power, common-collector
Maximum Operating Tempurature Per Measurement Point
200.0 degrees celsius junction
Thread Series Designator
Unc
Terminal Type And Quantity
4 uninsulated wire lead
NSN
5961-00-030-4679
Part Number
669261-1
Description
Transistor
CAGE
96214

An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes semiconductor device, diode and semiconductor device, thyristor. For solid state devices which are responsive to visible or infrared radiant energy, see semiconductor device, photo.

Part 669261-1 NSN 5961-00-030-4679

INC
FIIG
Concept No.
App. Key
Cond. Code
Status
INC:
20588
FIIG:
A110A0
Concept No.:
App. Key:
D
Cond. Code:
1
Status:
A

Material Classification

Hazardous material, precious metals, criticality, enviroment, and electrostatic discharge indicators
HMIC
PMIC
ESD/EMI
ENAC
MMAC
CRITL
HMIC:
N
PMIC:
U
ESD:
ESD:
MMAC:
CRITL:
X

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Schedule B and Export
  • Schedule B: 8541500080
  • SITC: 77639
  • End Use: Semiconductors
  • NAICS: 334413
  • USDA: 1

Freight Class: Semiconductor devices, nesoi

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