Special Features:

Center tap rectifier; peak inverse voltage 100v; forward current surge 15o amp; output current 15 amp max; operating temp m65 to p150 degrees c; glass diodes; epoxy encapsulated with aluminum frame; 3 wire loop type terminals; 2.260 in. Max lg; 0.354 in. Max w; 0.322 in. Max h; two 0.175 in. Max diameter mtg holes 1.880 in. Center to center; positive polarity; storage temp range: m65.0 to p150.0 degrees celcius

Properties:

Two or more diode semiconductor devices designed to function as a unit in changing alternating current to direct current. The diode devices are internally connected in series, and are permanently cased, encapsulated, potted, or molded together to form an inseparable unit. These units may be designed as either half-wave or full-wave rectifiers and may be mounted to form either single phase or three phase bridges. For interconnected items arranged in stack(s), see rectifier, semiconductor device. For items fabricated in the form of a monolithic or thin film structure that perform the function of a circuit, see integrated circuit (as modified). Excludes semiconductor devices, unitized; semiconductor device assembly; and rectifier network, unitized.