Model: 649A825H01
Thyristor Semiconductor Device0.250 inches overall height, 0.352 inches overall diameter, junction contact internal configuration, anode electrode internally-electrically connected to case.
Special Features:
Junction pattern arrangement: pnpn
Properties:
A bistable semiconductor device comprising three or more junctions which is normally a nonconductor until the application of a signal to a gate terminal, at which time the device switches to the conductive state. Includes devices capable of being switched back to the nonconductive state upon application of a different signal to the same or another gate terminal. May or may not include mounting hardware and/or heatsink. For solid state devices which are responsive to visible or infrared radiant energy, see semiconductor device, photo.
Part 649A825H01 NSN 5961-00-031-3631
Material Classification
Hazardous material, precious metals, criticality, enviroment, and electrostatic discharge indicatorsPackaging & Shipping
Freight Classification
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Schedule B and Export
- Schedule B: 8541300080
- SITC: 77635
- End Use: Semiconductors
- NAICS: 334413
- USDA: 1
Freight Class: Thyristors, diacs & triacs, other than photosensitive devices, nesoi
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