Model: 635A716H01

Thyristor Semiconductor Device

Special Features:

Nsn restricted to use by nws depot team only

Properties:

Inclosure Material
Ceramic and metal
Overall Length
0.520 inches
End Application
Airport surveillance radar (asr-9); next generation radar (nexrad)
Mounting Method
Press fit
Semiconductor Material
Silicon
Voltage Rating In Volts Per Characteristic
1300.0 on-state voltage, dc
Current Rating Per Characteristic
100.00 milliamperes drain current peak
Maximum Operating Tempurature Per Measurement Point
125.0 degrees celsius junction
Terminal Type And Quantity
2 case
NSN
5961-01-060-6663
Part Number
635A716H01
Description
Semiconductor Device,thyristor
CAGE

A bistable semiconductor device comprising three or more junctions which is normally a nonconductor until the application of a signal to a gate terminal, at which time the device switches to the conductive state. Includes devices capable of being switched back to the nonconductive state upon application of a different signal to the same or another gate terminal. May or may not include mounting hardware and/or heatsink. For solid state devices which are responsive to visible or infrared radiant energy, see semiconductor device, photo.

Part 635A716H01 NSN 5961-01-060-6663

INC
FIIG
Concept No.
App. Key
Cond. Code
Status
INC:
33096
FIIG:
A110A0
Concept No.:
1
App. Key:
D
Cond. Code:
1
Status:
A

Material Classification

Hazardous material, precious metals, criticality, enviroment, and electrostatic discharge indicators
HMIC
PMIC
ESD/EMI
ENAC
MMAC
CRITL
HMIC:
N
PMIC:
A
ESD:
ESD:
MMAC:
CRITL:
N

End Items End applications NSN 5961-01-060-6663 is a component of

  • Airport Surveillance Radar (asr-9); Next Generation Radar (nexrad)

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Schedule B and Export
  • Schedule B: 8541300080
  • SITC: 77635
  • End Use: Semiconductors
  • NAICS: 334413
  • USDA: 1

Freight Class: Thyristors, diacs & triacs, other than photosensitive devices, nesoi

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