Model: 635

Transistor

Special Features:

Junction pattern arrangement: npn

Properties:

Inclosure Material
Metal
Overall Length
1.573 inches
Terminal Length
0.312 inches
Overall Height
0.562 inches
Overall Width
1.050 inches
Mounting Facility Quantity
2
Internal Configuration
Junction contact
Joint Electronic Device Engineering Council/jedec/case Outline Designation
To-3
Mounting Method
Unthreaded hole
Semiconductor Material
Silicon
Voltage Rating In Volts Per Characteristic
60.0 collector-to-emitter, substaining voltage, base open-circuited and 80.0 collector to base voltage/static/emitter open and 10.0 emitter to base voltage, static, collector open and 2.2 base to emitter saturation voltage and 1.0 collector to emitter saturation voltage
Current Rating Per Characteristic
250.00 microamperes zero-gate-voltage source current preset
Terminal Type And Quantity
2 pin and 1 case
NSN
5961-01-273-3978
Part Number
635
Description
Transistor
CAGE
54648

An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes semiconductor device, diode and semiconductor device, thyristor. For solid state devices which are responsive to visible or infrared radiant energy, see semiconductor device, photo.

Part 635 NSN 5961-01-273-3978

INC
FIIG
Concept No.
App. Key
Cond. Code
Status
INC:
20588
FIIG:
A110A0
Concept No.:
App. Key:
D
Cond. Code:
1
Status:
A

Material Classification

Hazardous material, precious metals, criticality, enviroment, and electrostatic discharge indicators
HMIC
PMIC
ESD/EMI
ENAC
MMAC
CRITL
HMIC:
N
PMIC:
A
ESD:
ESD:
MMAC:
CRITL:
X

Packaging & Shipping

Est. Pack Size
Est. Pack Weight
Est. Item Weight
Est. Item Dim.
Pack Size:
--
Paclk Weight:
--
Item Weight:
--
Item Dim:
--
OPI
SPI No.
SPI Rev.
SPC Mkg.
LVL A
LVL B
OPI:
O
SPI No.:
SPI Rev.:
SPC Mkg:
00
LVL_A:
Q
LVL_B:
Q

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Schedule B and Export
  • Schedule B: 8541500080
  • SITC: 77639
  • End Use: Semiconductors
  • NAICS: 334413
  • USDA: 1

Freight Class: Semiconductor devices, nesoi

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