Special Features:

Full wave bridge-3 phase; 5 lead terminals; 2.240 in. Min to 2.260 in. Max over all lg; 0.820 in. Max h; 0.740 in. To 0.760 in. Max w; two 0.164 in. Min to 0.174 in. Max diameter mtg holes spaced 1.870 in. Min to 1.880 in. Max c to c; 600.0 peak inverse voltage each diode; 10.0 micro amps max reverse current; m65.0 to p150.0 degrees c operating temp

Properties:

Two or more diode semiconductor devices designed to function as a unit in changing alternating current to direct current. The diode devices are internally connected in series, and are permanently cased, encapsulated, potted, or molded together to form an inseparable unit. These units may be designed as either half-wave or full-wave rectifiers and may be mounted to form either single phase or three phase bridges. For interconnected items arranged in stack(s), see rectifier, semiconductor device. For items fabricated in the form of a monolithic or thin film structure that perform the function of a circuit, see integrated circuit (as modified). Excludes semiconductor devices, unitized; semiconductor device assembly; and rectifier network, unitized.