Model: 580R299H01

Thyristor Semiconductor Device
Description:

Metal inclosure material, 0.300 inches overall length, 1 mounting facility quantity, junction contact internal configuration, anode electrode internally-electrically connected to case.

Special Features:

Must meet all test requirements of westinghouse dwg 58or299; junction pattern arrangement: npnp

Properties:

Inclosure Material
Metal
Overall Length
Between 0.300 inches and 0.400 inches
Mounting Facility Quantity
1
Internal Configuration
Junction contact
Electrode Internally-electrically Connected To Case
Anode
Mounting Method
Threaded stud
Features Provided
Hermetically sealed case
Overall Width Across Flats
Between 0.424 inches and 0.437 inches
Thread Size
0.190 inches
Semiconductor Material
Silicon
Voltage Rating In Volts Per Characteristic
75.0 breakdown voltage, emitter-to-base, collector open and 10.0 peak negative gate voltage and 50.0 reverse voltage, peak
Current Rating Per Characteristic
2.00 amperes forward current, total rms blank and 4.70 amperes forward current, total rms megahertz and 60.00 amperes forward current, total rms watts
Power Rating Per Characteristic
5.0 watts small-signal input power, common-collector blank
Maximum Operating Tempurature Per Measurement Point
150.0 degrees celsius junction
Test Data Document
97942-580r299 drawing (this is the basic governing drawing, such as a contractor drawing, original equipment manufacturer drawing, etc.; excludes any specification, standard or other document that may be referenced in a basic governing drawing)
Thread Series Designator
Unf
Terminal Type And Quantity
2 tab, solder lug and 1 threaded stud
NSN
5961-00-072-8573
Part Number
580R299H01
Description
Semiconductor Device,thyristor
CAGE
97942

A bistable semiconductor device comprising three or more junctions which is normally a nonconductor until the application of a signal to a gate terminal, at which time the device switches to the conductive state. Includes devices capable of being switched back to the nonconductive state upon application of a different signal to the same or another gate terminal. May or may not include mounting hardware and/or heatsink. For solid state devices which are responsive to visible or infrared radiant energy, see semiconductor device, photo.

Part 580R299H01 NSN 5961-00-072-8573

INC
FIIG
Concept No.
App. Key
Cond. Code
Status
INC:
33096
FIIG:
A110A0
Concept No.:
1
App. Key:
D
Cond. Code:
1
Status:
A

Material Classification

Hazardous material, precious metals, criticality, enviroment, and electrostatic discharge indicators
HMIC
PMIC
ESD/EMI
ENAC
MMAC
CRITL
HMIC:
N
PMIC:
U
ESD:
ESD:
MMAC:
CRITL:
X

Packaging & Shipping

Est. Pack Size
Est. Pack Weight
Est. Item Weight
Est. Item Dim.
Pack Size:
--
Paclk Weight:
0.1000lbs
Item Weight:
--
Item Dim:
--
OPI
SPI No.
SPI Rev.
SPC Mkg.
LVL A
LVL B
OPI:
O
SPI No.:
SPI Rev.:
SPC Mkg:
ZZ
LVL_A:
Q
LVL_B:
Q

Freight Classification

NMFC
UFC
LTL
LCL
WCC
TCC
SHC
ACC
NMFC:
063025
UFC:
34525
LTL:
RATING VARIABLE
LCL:
--
WCC:
658
TCC:
Z
SHC:
9
ACC:
Instruments/Radio

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Schedule B and Export
  • Schedule B: 8541300080
  • SITC: 77635
  • End Use: Semiconductors
  • NAICS: 334413
  • USDA: 1

Freight Class: Thyristors, diacs & triacs, other than photosensitive devices, nesoi

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