Model: 580-636

Transistor

Special Features:

Junction pattern arrangement: npn

Properties:

Overall Height
Between 0.150 inches and 0.180 inches
Overall Diameter
Between 0.305 inches and 0.335 inches
Internal Configuration
Junction contact
Voltage Rating In Volts Per Characteristic
1.0 collector to base voltage, dc
Power Rating Per Characteristic
600.0 milliwatts small-signal input power, common-collector
Terminal Type And Quantity
7 uninsulated wire lead
NSN
5961-01-042-9850
Part Number
580-636
Description
Transistor
CAGE
92739

An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes semiconductor device, diode and semiconductor device, thyristor. For solid state devices which are responsive to visible or infrared radiant energy, see semiconductor device, photo.

Part 580-636 NSN 5961-01-042-9850

INC
FIIG
Concept No.
App. Key
Cond. Code
Status
INC:
20588
FIIG:
A110A0
Concept No.:
App. Key:
D
Cond. Code:
1
Status:
A

Material Classification

Hazardous material, precious metals, criticality, enviroment, and electrostatic discharge indicators
HMIC
PMIC
ESD/EMI
ENAC
MMAC
CRITL
HMIC:
N
PMIC:
U
ESD:
A
ESD:
A
MMAC:
CRITL:
X

Freight Classification

NMFC
UFC
LTL
LCL
WCC
TCC
SHC
ACC
NMFC:
063025
UFC:
34525
LTL:
RATING VARIABLE
LCL:
100.0
WCC:
658
TCC:
Z
SHC:
9
ACC:
Instruments/Radio

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Schedule B and Export
  • Schedule B: 8541500080
  • SITC: 77639
  • End Use: Semiconductors
  • NAICS: 334413
  • USDA: 1

Freight Class: Semiconductor devices, nesoi

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