Model: 539D840-1

Transistor

Special Features:

Junction pattern arrangement: npn

Properties:

Inclosure Material
Metal
Overall Length
Between 0.240 inches and 0.260 inches
Terminal Length
0.500 inches
Overall Diameter
Between 0.335 inches and 0.370 inches
Joint Electronic Device Engineering Council/jedec/case Outline Designation
T0-5
Electrode Internally-electrically Connected To Case
Collector
Mounting Method
Terminal
Terminal Circle Diameter
0.200 inches
Features Provided
Hermetically sealed case
Semiconductor Material
Silicon
Voltage Rating In Volts Per Characteristic
100.0 collector to base voltage/static/emitter open and 60.0 collector to emitter voltage/static/base open and 7.0 emitter to base voltage, static, collector open
Maximum Operating Tempurature Per Measurement Point
200.0 degrees celsius ambient air
Terminal Type And Quantity
3 uninsulated wire lead
NSN
5961-01-068-6440
Part Number
539D840-1
Description
Transistor
CAGE
89954

An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes semiconductor device, diode and semiconductor device, thyristor. For solid state devices which are responsive to visible or infrared radiant energy, see semiconductor device, photo.

Part 539D840-1 NSN 5961-01-068-6440

INC
FIIG
Concept No.
App. Key
Cond. Code
Status
INC:
20588
FIIG:
A110A0
Concept No.:
App. Key:
D
Cond. Code:
1
Status:
A

Material Classification

Hazardous material, precious metals, criticality, enviroment, and electrostatic discharge indicators
HMIC
PMIC
ESD/EMI
ENAC
MMAC
CRITL
HMIC:
N
PMIC:
U
ESD:
ESD:
MMAC:
XZ
CRITL:
X

Freight Classification

NMFC
UFC
LTL
LCL
WCC
TCC
SHC
ACC
NMFC:
061700
UFC:
34580
LTL:
RATING VARIABLE
LCL:
85.0
WCC:
72D
TCC:
3
SHC:
Z
ACC:
Instruments/Radio

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Schedule B and Export
  • Schedule B: 8541500080
  • SITC: 77639
  • End Use: Semiconductors
  • NAICS: 334413
  • USDA: 1

Freight Class: Semiconductor devices, nesoi

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