Model: 5027-616

Transistor

Special Features:

Junction pattern arrangement: pnp

Properties:

Inclosure Material
Metal
Overall Length
0.410 inches
Overall Diameter
1.530 inches
Mounting Facility Quantity
2
Internal Configuration
Junction contact
Mounting Method
Unthreaded hole
Features Provided
Hermetically sealed case
Semiconductor Material
Germanium
Voltage Rating In Volts Per Characteristic
80.0 collector to base voltage, dc and 60.0 collector to emitter voltage, dc
Current Rating Per Characteristic
3.00 amperes source cutoff current
Power Rating Per Characteristic
90.0 watts small-signal input power, common-collector
Maximum Operating Tempurature Per Measurement Point
100.0 degrees celsius junction
Terminal Type And Quantity
1 case and 2 pin
NSN
5961-00-625-3506
Part Number
5027-616
Description
Transistor
CAGE
05869

An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes semiconductor device, diode and semiconductor device, thyristor. For solid state devices which are responsive to visible or infrared radiant energy, see semiconductor device, photo.

Part 5027-616 NSN 5961-00-625-3506

INC
FIIG
Concept No.
App. Key
Cond. Code
Status
INC:
20588
FIIG:
A110A0
Concept No.:
App. Key:
D
Cond. Code:
1
Status:
A

Material Classification

Hazardous material, precious metals, criticality, enviroment, and electrostatic discharge indicators
HMIC
PMIC
ESD/EMI
ENAC
MMAC
CRITL
HMIC:
N
PMIC:
A
ESD:
ESD:
MMAC:
CRITL:
X

Freight Classification

NMFC
UFC
LTL
LCL
WCC
TCC
SHC
ACC
NMFC:
063025
UFC:
34525
LTL:
RATING VARIABLE
LCL:
100.0
WCC:
658
TCC:
Z
SHC:
9
ACC:
Instruments/Radio

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Schedule B and Export
  • Schedule B: 8541500080
  • SITC: 77639
  • End Use: Semiconductors
  • NAICS: 334413
  • USDA: 1

Freight Class: Semiconductor devices, nesoi

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