Model: 4N35M

Photo Semiconductor Device

Special Features:

Gallium arsenide infrared emitting diode

Properties:

Overall Length
Between 0.320 inches and 0.350 inches
Overall Height
Between 0.115 inches and 0.200 inches
Overall Width
Between 0.240 inches and 0.260 inches
Function For Which Designed
Phototransistor
Mounting Method
Terminal
Semiconductor Material
Silicon
Voltage Rating In Volts Per Characteristic
0.3 collector to emitter saturation voltage
Part Name Assigned By Controlling Agency
Phototransistor optocoupler
Terminal Type And Quantity
6 pin
NSN
5961-01-577-7566
Part Number
4N35M
Description
Semiconductor Device,photo
CAGE
07263

A semiconductor device (1) which is responsive to visible or infrared radiant energy. May or may not include mounting hardware and/or heat sink. Excludes semiconductor device (1), diode; semiconductor device (1), thyristor and transistor. For solid state devices which emit visible or infrared radiant energy, see light emitting diode.

Part 4N35M NSN 5961-01-577-7566

INC
FIIG
Concept No.
App. Key
Cond. Code
Status
INC:
20587
FIIG:
A110A0
Concept No.:
1
App. Key:
C
Cond. Code:
2
Status:
A

Material Classification

Hazardous material, precious metals, criticality, enviroment, and electrostatic discharge indicators
HMIC
PMIC
ESD/EMI
ENAC
MMAC
CRITL
HMIC:
N
PMIC:
A
ESD:
A
ESD:
A
MMAC:
CRITL:
X

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Schedule B and Export
  • Schedule B: 8541409500
  • SITC: 77637
  • End Use: Semiconductors
  • NAICS: 334413
  • USDA: 1

Freight Class: Photosensitive semiconductor devices, nesoi

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