Model: 4038796-0001

Transistor

Special Features:

Junction pattern arrangement: npn

Properties:

Inclosure Material
Ceramic
Overall Length
0.280 inches
Overall Width
0.300 inches
Mounting Facility Quantity
1
Internal Configuration
Junction contact
Electrode Internally-electrically Connected To Case
Collector
Mounting Method
Threaded stud
Thread Size
0.164 inches
Semiconductor Material
Silicon
Voltage Rating In Volts Per Characteristic
50.0 breakdown voltage, collector-to-emitter, with base short-circuited to emitter
Current Rating Per Characteristic
2.00 amperes source cutoff current
Power Rating Per Characteristic
40.0 watts small-signal input power, common-collector preset
Maximum Operating Tempurature Per Measurement Point
200.0 degrees celsius junction
Thread Series Designator
Unc
Terminal Type And Quantity
4 ferrule
NSN
5961-01-033-2330
Part Number
4038796-0001
Description
Transistor
CAGE
06845

An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes semiconductor device, diode and semiconductor device, thyristor. For solid state devices which are responsive to visible or infrared radiant energy, see semiconductor device, photo.

Part 4038796-0001 NSN 5961-01-033-2330

INC
FIIG
Concept No.
App. Key
Cond. Code
Status
INC:
20588
FIIG:
A110A0
Concept No.:
App. Key:
D
Cond. Code:
1
Status:
A

Material Classification

Hazardous material, precious metals, criticality, enviroment, and electrostatic discharge indicators
HMIC
PMIC
ESD/EMI
ENAC
MMAC
CRITL
HMIC:
N
PMIC:
U
ESD:
A
ESD:
A
MMAC:
CRITL:
X

Packaging & Shipping

Est. Pack Size
Est. Pack Weight
Est. Item Weight
Est. Item Dim.
Pack Size:
--
Paclk Weight:
--
Item Weight:
--
Item Dim:
--
OPI
SPI No.
SPI Rev.
SPC Mkg.
LVL A
LVL B
OPI:
O
SPI No.:
SPI Rev.:
SPC Mkg:
00
LVL_A:
Q
LVL_B:
Q

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Schedule B and Export
  • Schedule B: 8541500080
  • SITC: 77639
  • End Use: Semiconductors
  • NAICS: 334413
  • USDA: 1

Freight Class: Semiconductor devices, nesoi

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