Model: 40306

Transistor

Special Features:

Junction pattern arrangement: npn

Properties:

Inclosure Material
Metal
Overall Length
0.266 inches
Overall Diameter
0.406 inches
Mounting Facility Quantity
1
Internal Configuration
Junction contact
Mounting Method
Threaded stud
Features Provided
Hermetically sealed case
Overall Width Across Flats
0.430 inches
Thread Size
0.190 inches
Semiconductor Material
Silicon
Voltage Rating In Volts Per Characteristic
65.0 breakdown voltage, collector-to-base, emitter open and 40.0 breakdown voltage, collector-to-emitter, base open and 4.0 breakdown voltage, emitter-to-base, collector open
Current Rating Per Characteristic
1.50 amperes source cutoff current
Power Rating Per Characteristic
12.0 watts small-signal input power, common-collector
Maximum Operating Tempurature Per Measurement Point
200.0 degrees celsius junction
Thread Series Designator
Unf
Terminal Type And Quantity
3 pin
NSN
5961-00-457-7950
Part Number
40306
Description
Transistor
CAGE
1MY79

An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes semiconductor device, diode and semiconductor device, thyristor. For solid state devices which are responsive to visible or infrared radiant energy, see semiconductor device, photo.

Part 40306 NSN 5961-00-457-7950

INC
FIIG
Concept No.
App. Key
Cond. Code
Status
INC:
20588
FIIG:
A110A0
Concept No.:
App. Key:
D
Cond. Code:
1
Status:
A

Material Classification

Hazardous material, precious metals, criticality, enviroment, and electrostatic discharge indicators
HMIC
PMIC
ESD/EMI
ENAC
MMAC
CRITL
HMIC:
N
PMIC:
U
ESD:
ESD:
MMAC:
CRITL:
X

Freight Classification

NMFC
UFC
LTL
LCL
WCC
TCC
SHC
ACC
NMFC:
063025
UFC:
34525
LTL:
RATING VARIABLE
LCL:
100.0
WCC:
658
TCC:
Z
SHC:
9
ACC:
Instruments/Radio

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Schedule B and Export
  • Schedule B: 8541500080
  • SITC: 77639
  • End Use: Semiconductors
  • NAICS: 334413
  • USDA: 1

Freight Class: Semiconductor devices, nesoi

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