Model: 3N204

Transistor

Properties:

Inclosure Material
Metal
Overall Length
Between 0.170 inches and 0.210 inches
Terminal Length
0.500 inches
Overall Diameter
Between 0.209 inches and 0.230 inches
Internal Configuration
Field effect-dual gate
Joint Electronic Device Engineering Council/jedec/case Outline Designation
T0.72
Mounting Method
Terminal
Terminal Circle Diameter
0.100 inches
Features Provided
Hermetically sealed case
Semiconductor Material
Silicon
Voltage Rating In Volts Per Characteristic
25.0 breakdown voltage, drain-to-source, with all other terminals short-circuited to source and 4.0 gate to source threshold voltage
Current Rating Per Characteristic
50.00 milliamperes zero-gate-voltage source current megawatts
Power Rating Per Characteristic
360.0 milliwatts small-signal input power, common-collector absolute
Terminal Type And Quantity
4 uninsulated wire lead
NSN
5961-01-066-7178
Part Number
3N204
Description
Transistor
CAGE
01295

An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes semiconductor device, diode and semiconductor device, thyristor. For solid state devices which are responsive to visible or infrared radiant energy, see semiconductor device, photo.

Part 3N204 NSN 5961-01-066-7178

INC
FIIG
Concept No.
App. Key
Cond. Code
Status
INC:
20588
FIIG:
A110A0
Concept No.:
App. Key:
D
Cond. Code:
1
Status:
A

Material Classification

Hazardous material, precious metals, criticality, enviroment, and electrostatic discharge indicators
HMIC
PMIC
ESD/EMI
ENAC
MMAC
CRITL
HMIC:
N
PMIC:
A
ESD:
B
ESD:
B
MMAC:
CRITL:
X

Freight Classification

NMFC
UFC
LTL
LCL
WCC
TCC
SHC
ACC
NMFC:
063025
UFC:
34525
LTL:
RATING VARIABLE
LCL:
100.0
WCC:
658
TCC:
3
SHC:
9
ACC:
Instruments/Radio

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Schedule B and Export
  • Schedule B: 8541500080
  • SITC: 77639
  • End Use: Semiconductors
  • NAICS: 334413
  • USDA: 1

Freight Class: Semiconductor devices, nesoi

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