Model: 3N200-B

Transistor

Properties:

Inclosure Material
Metal
Overall Length
Between 0.170 inches and 0.210 inches
Terminal Length
0.500 inches
Overall Diameter
Between 0.209 inches and 0.230 inches
Internal Configuration
Field effect
Joint Electronic Device Engineering Council/jedec/case Outline Designation
To-72
Mounting Method
Terminal
Terminal Circle Diameter
0.100 inches
Features Provided
Hermetically sealed case
Semiconductor Material
Silicon
Voltage Rating In Volts Per Characteristic
20.0 drain to source voltage
Current Rating Per Characteristic
50.00 milliamperes drain current
Power Rating Per Characteristic
330.0 milliwatts total power dissipation
Maximum Operating Tempurature Per Measurement Point
175.0 degrees celsius ambient air
Terminal Type And Quantity
4 uninsulated wire lead
NSN
5961-01-248-8499
Part Number
3N200-B
Description
Transistor
CAGE
1MY79

An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes semiconductor device, diode and semiconductor device, thyristor. For solid state devices which are responsive to visible or infrared radiant energy, see semiconductor device, photo.

Part 3N200-B NSN 5961-01-248-8499

INC
FIIG
Concept No.
App. Key
Cond. Code
Status
INC:
20588
FIIG:
A110A0
Concept No.:
App. Key:
D
Cond. Code:
1
Status:
A

Material Classification

Hazardous material, precious metals, criticality, enviroment, and electrostatic discharge indicators
HMIC
PMIC
ESD/EMI
ENAC
MMAC
CRITL
HMIC:
N
PMIC:
A
ESD:
B
ESD:
B
MMAC:
CRITL:
X

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Schedule B and Export
  • Schedule B: 8541500080
  • SITC: 77639
  • End Use: Semiconductors
  • NAICS: 334413
  • USDA: 1

Freight Class: Semiconductor devices, nesoi

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