Model: 3N190

Transistor

Properties:

Overall Length
0.170 inches
Terminal Length
0.500 inches
Overall Diameter
0.352 inches
Internal Configuration
Field effect-dual gate
Joint Electronic Device Engineering Council/jedec/case Outline Designation
To-99
Mounting Method
Terminal
Terminal Circle Diameter
0.200 inches
Voltage Rating In Volts Per Characteristic
-40.0 breakdown voltage, drain-to-source, with all other terminals short-circuited to source and -5.0 gate to source threshold voltage
Current Rating Per Characteristic
50.00 milliamperes on-state drain current
Power Rating Per Characteristic
525.0 milliwatts total device dissipation
Terminal Type And Quantity
8 ribbon
NSN
5961-01-278-8568
Part Number
3N190
Description
Transistor
CAGE
21845

An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes semiconductor device, diode and semiconductor device, thyristor. For solid state devices which are responsive to visible or infrared radiant energy, see semiconductor device, photo.

Part 3N190 NSN 5961-01-278-8568

INC
FIIG
Concept No.
App. Key
Cond. Code
Status
INC:
20588
FIIG:
A110A0
Concept No.:
App. Key:
D
Cond. Code:
1
Status:
A

Material Classification

Hazardous material, precious metals, criticality, enviroment, and electrostatic discharge indicators
HMIC
PMIC
ESD/EMI
ENAC
MMAC
CRITL
HMIC:
N
PMIC:
U
ESD:
A
ESD:
A
MMAC:
CRITL:
X

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Schedule B and Export
  • Schedule B: 8541500080
  • SITC: 77639
  • End Use: Semiconductors
  • NAICS: 334413
  • USDA: 1

Freight Class: Semiconductor devices, nesoi

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