Model: 3F10

Diode Semiconductor Device

Properties:

Inclosure Material
Metal
Overall Length
0.405 inches
Mounting Facility Quantity
1
Mounting Method
Threaded stud
Features Provided
Hermetically sealed case
Overall Width Across Flats
0.434 inches
Thread Size
0.190 inches
Semiconductor Material
Silicon
Voltage Rating In Volts Per Characteristic
100.0 reverse voltage, peak
Current Rating Per Characteristic
3.00 amperes forward current, average absolute
Maximum Operating Tempurature Per Measurement Point
175.0 degrees celsius ambient air
Thread Series Designator
Unf
Terminal Type And Quantity
1 threaded stud and 1 tab, solder lug
NSN
5961-00-465-3180
Part Number
3F10
Description
Semiconductor Device,diode
CAGE
81483

A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes light emitting diode and semiconductor device,photo. For items containing material such as selenium and copper oxide, see recifier, metallic.

Part 3F10 NSN 5961-00-465-3180

INC
FIIG
Concept No.
App. Key
Cond. Code
Status
INC:
20589
FIIG:
A110A0
Concept No.:
1
App. Key:
B
Cond. Code:
1
Status:
A

Material Classification

Hazardous material, precious metals, criticality, enviroment, and electrostatic discharge indicators
HMIC
PMIC
ESD/EMI
ENAC
MMAC
CRITL
HMIC:
N
PMIC:
U
ESD:
ESD:
MMAC:
CRITL:
X

Freight Classification

NMFC
UFC
LTL
LCL
WCC
TCC
SHC
ACC
NMFC:
063025
UFC:
34525
LTL:
RATING VARIABLE
LCL:
--
WCC:
72D
TCC:
Z
SHC:
9
ACC:
Instruments/Radio

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Schedule B and Export
  • Schedule B: 8541100070
  • SITC: 77631
  • End Use: Semiconductors
  • NAICS: 334413
  • USDA: 1

Freight Class: Diodes, other than photosensitve or led, with a maximum current of 0.5 a or less

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