Model: 37669

Transistor

Properties:

Inclosure Material
Metal
Overall Length
Between 0.250 inches and 0.450 inches
Overall Diameter
0.875 inches
Mounting Facility Quantity
2
Internal Configuration
Junction contact
Electrode Internally-electrically Connected To Case
Collector
Internal Junction Configuration
Npn
Mounting Method
Unthreaded hole
Features Provided
Hermetically sealed case
Semiconductor Material
Silicon
Voltage Rating In Volts Per Characteristic
1.0 collector to emitter saturation voltage and 140.0 collector-to-emitter, substaining voltage, base open-circuited and 1.7 base to emitter voltage, dc
Current Rating Per Characteristic
3.00 amperes source cutoff current
Terminal Type And Quantity
2 uninsulated wire lead and 1 case
NSN
5961-00-472-0364
Part Number
37669
Description
Transistor
CAGE
1MY79

An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes semiconductor device, diode and semiconductor device, thyristor. For solid state devices which are responsive to visible or infrared radiant energy, see semiconductor device, photo.

Part 37669 NSN 5961-00-472-0364

INC
FIIG
Concept No.
App. Key
Cond. Code
Status
INC:
20588
FIIG:
A110A0
Concept No.:
App. Key:
D
Cond. Code:
1
Status:
A

Material Classification

Hazardous material, precious metals, criticality, enviroment, and electrostatic discharge indicators
HMIC
PMIC
ESD/EMI
ENAC
MMAC
CRITL
HMIC:
N
PMIC:
A
ESD:
ESD:
MMAC:
CRITL:
X

Freight Classification

NMFC
UFC
LTL
LCL
WCC
TCC
SHC
ACC
NMFC:
063025
UFC:
34525
LTL:
RATING VARIABLE
LCL:
--
WCC:
658
TCC:
Z
SHC:
9
ACC:
Instruments/Radio

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Schedule B and Export
  • Schedule B: 8541500080
  • SITC: 77639
  • End Use: Semiconductors
  • NAICS: 334413
  • USDA: 1

Freight Class: Semiconductor devices, nesoi

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