Model: 353-3821-012

Diode Semiconductor Device

Properties:

Inclosure Material
Ceramic
Overall Length
Between 0.140 inches and 0.163 inches
Overall Diameter
Between 0.118 inches and 0.124 inches
Mounting Facility Quantity
2
Mounting Method
Compression
Semiconductor Material
Silicon
Voltage Rating In Volts Per Characteristic
120.0 breakover voltage, dc and 180.0 breakover voltage, dc
Power Rating Per Characteristic
10.0 watts small-signal input power, common-emitter absolute
Maximum Operating Tempurature Per Measurement Point
-55.0 degrees celsius case and 200.0 degrees celsius case
Terminal Type And Quantity
2 uninsulated wire lead
NSN
5961-01-394-4896
Part Number
353-3821-012
Description
Semiconductor Device,diode
CAGE
13499

A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes light emitting diode and semiconductor device,photo. For items containing material such as selenium and copper oxide, see recifier, metallic.

Part 353-3821-012 NSN 5961-01-394-4896

INC
FIIG
Concept No.
App. Key
Cond. Code
Status
INC:
20589
FIIG:
A110A0
Concept No.:
1
App. Key:
B
Cond. Code:
1
Status:
A

Material Classification

Hazardous material, precious metals, criticality, enviroment, and electrostatic discharge indicators
HMIC
PMIC
ESD/EMI
ENAC
MMAC
CRITL
HMIC:
N
PMIC:
A
ESD:
A
ESD:
A
MMAC:
CRITL:
X

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Schedule B and Export
  • Schedule B: 8541100070
  • SITC: 77631
  • End Use: Semiconductors
  • NAICS: 334413
  • USDA: 1

Freight Class: Diodes, other than photosensitve or led, with a maximum current of 0.5 a or less

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