Model: 353-3591-230

Diode Semiconductor Device

Properties:

Inclosure Material
Glass
Overall Length
Between 0.230 inches and 0.300 inches
Terminal Length
1.000 inches
Overall Diameter
Between 0.085 inches and 0.107 inches
End Application
Tcn-500 (an/arn-15 (v))
Joint Electronic Device Engineering Council/jedec/case Outline Designation
Do-7
Mounting Method
Terminal
Features Provided
Hermetically sealed case
Semiconductor Material
Silicon
Voltage Rating In Volts Per Characteristic
33.0 regulator voltage
Current Rating Per Characteristic
0.250 milliamperes reverse surge current
Power Rating Per Characteristic
250.0 milliwatts total power dissipation
Maximum Operating Tempurature Per Measurement Point
200.0 degrees celsius junction
Part Name Assigned By Controlling Agency
Semiconductor device
Terminal Type And Quantity
2 uninsulated wire lead
NSN
5961-01-596-9353
Part Number
353-3591-230
Description
Semiconductor Device,diode
CAGE
13499

A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes light emitting diode and semiconductor device,photo. For items containing material such as selenium and copper oxide, see recifier, metallic.

Part 353-3591-230 NSN 5961-01-596-9353

INC
FIIG
Concept No.
App. Key
Cond. Code
Status
INC:
20589
FIIG:
A110A0
Concept No.:
1
App. Key:
B
Cond. Code:
1
Status:
A

Material Classification

Hazardous material, precious metals, criticality, enviroment, and electrostatic discharge indicators
HMIC
PMIC
ESD/EMI
ENAC
MMAC
CRITL
HMIC:
N
PMIC:
A
ESD:
A
ESD:
A
MMAC:
CRITL:
X

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Schedule B and Export
  • Schedule B: 8541100070
  • SITC: 77631
  • End Use: Semiconductors
  • NAICS: 334413
  • USDA: 1

Freight Class: Diodes, other than photosensitve or led, with a maximum current of 0.5 a or less

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