Model: 352-0976-010

Photo Semiconductor Device

Properties:

Inclosure Material
Ceramic and metal and glass
Overall Length
Between 0.102 inches and 0.115 inches
Overall Diameter
Between 0.084 inches and 0.092 inches
Mounting Method
Press fit
Features Provided
Hermetically sealed case and gold plated leads
Semiconductor Material
Silicon
Voltage Rating In Volts Per Characteristic
50.0 collector to emitter voltage/static/base open and 7.0 emitter to collector voltage, dc
Current Rating Per Characteristic
1.00 microamperes emitter current, dc peak
Power Rating Per Characteristic
50.0 milliwatts small-signal input power, common-collector preset
Maximum Operating Tempurature Per Measurement Point
125.0 degrees celsius ambient air
Precious Material And Location
Case and tab surfaces gold
Precious Material
Gold
Terminal Type And Quantity
2 tab, solder lug and 1 case
NSN
5961-00-488-4832
Part Number
352-0976-010
Description
Semiconductor Device,photo
CAGE
13499

A semiconductor device (1) which is responsive to visible or infrared radiant energy. May or may not include mounting hardware and/or heat sink. Excludes semiconductor device (1), diode; semiconductor device (1), thyristor and transistor. For solid state devices which emit visible or infrared radiant energy, see light emitting diode.

Part 352-0976-010 NSN 5961-00-488-4832

INC
FIIG
Concept No.
App. Key
Cond. Code
Status
INC:
20587
FIIG:
A110A0
Concept No.:
1
App. Key:
C
Cond. Code:
2
Status:
A

Material Classification

Hazardous material, precious metals, criticality, enviroment, and electrostatic discharge indicators
HMIC
PMIC
ESD/EMI
ENAC
MMAC
CRITL
HMIC:
N
PMIC:
G
ESD:
A
ESD:
A
MMAC:
CRITL:
X

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Schedule B and Export
  • Schedule B: 8541409500
  • SITC: 77637
  • End Use: Semiconductors
  • NAICS: 334413
  • USDA: 1

Freight Class: Photosensitive semiconductor devices, nesoi

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