Model: 351-0513-030

Unitized Semiconductor Devices

Special Features:

All semiconductor device diode junction pattern arrangement: npn

Properties:

Inclosure Material
Ceramic
Overall Length
0.785 inches
Terminal Length
0.100 inches
Overall Height
0.200 inches
Overall Width
0.015 inches
Response Time
35.0 nanoseconds all semiconductor device diode
Component Name And Quantity
4 semiconductor device diode
Mounting Method
Terminal
Features Provided
Hermetically sealed case
Semiconductor Material
Silicon all semiconductor device diode
Voltage Rating In Volts Per Characteristic
40.0 collector to emitter voltage, dc all semiconductor device diode and 60.0 collector to base voltage, dc all semiconductor device diode and 6.0 emitter to base voltage, dc all semiconductor device diode
Current Rating Per Characteristic
1.50 amperes source cutoff current all semiconductor device diode
Power Rating Per Characteristic
0.75 watts small-signal input power, common-collector absolute all semiconductor device diode
Capacitance Rating In Picofarads
10.0 all semiconductor device diode
Transfer Ratio
60.0 static forward current transfer ratio, common-emitter all semiconductor device diode
Maximum Operating Tempurature Per Measurement Point
200.0 degrees celsius junction
Terminal Type And Quantity
14 pin
NSN
5961-01-173-7362
Part Number
351-0513-030
Description
Semiconductor Devices,unitized
CAGE

Two or more discrete semiconductor devices such as diode(s) and/or transistor(s), permanently cased, encapsulated, or potted together to form an inseparable unit. Excludes devices having one or more components other than semiconductor devices. The individually distinct devices forming the unit may be internally connected. The unit in itself does not perform a complete specific function and cannot be assigned a more definite item name. It may include or consist of inseparable matched pairs. May or may not include mounting hardware and/or heatsink. For interconnected items arranged in stack(s), see rectifier, semiconductor device. For items formed on or within a semiconductor material substrate, formed on an insulating substrate or formed on a combination of both of these types, see microcircuit (as modified). Excludes network (as modified); absorber, overvoltage; semiconductor device set; and semiconductor device assembly. Do not use if more specific name applies.

Part 351-0513-030 NSN 5961-01-173-7362

INC
FIIG
Concept No.
App. Key
Cond. Code
Status
INC:
61962
FIIG:
A110A0
Concept No.:
App. Key:
E
Cond. Code:
1
Status:
A

Material Classification

Hazardous material, precious metals, criticality, enviroment, and electrostatic discharge indicators
HMIC
PMIC
ESD/EMI
ENAC
MMAC
CRITL
HMIC:
N
PMIC:
A
ESD:
ESD:
MMAC:
CRITL:
X

Packaging & Shipping

Est. Pack Size
Est. Pack Weight
Est. Item Weight
Est. Item Dim.
Pack Size:
--
Paclk Weight:
--
Item Weight:
--
Item Dim:
--
OPI
SPI No.
SPI Rev.
SPC Mkg.
LVL A
LVL B
OPI:
O
SPI No.:
SPI Rev.:
SPC Mkg:
ZZ
LVL_A:
Q
LVL_B:
Q

Freight Classification

NMFC
UFC
LTL
LCL
WCC
TCC
SHC
ACC
NMFC:
063025
UFC:
34525
LTL:
RATING VARIABLE
LCL:
--
WCC:
72D
TCC:
Z
SHC:
9
ACC:
Instruments/Radio

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Schedule B and Export
  • Schedule B: 8541500080
  • SITC: 77639
  • End Use: Semiconductors
  • NAICS: 334413
  • USDA: 1

Freight Class: Semiconductor devices, nesoi

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