Special Features:

Silicon three phase bridge rectifier with black anodized aluminum case; working peak reverse voltage 600.0 volts; average forward current 5.0 amps; operating temp range from m55.0 degrees c to p150.0 degrees c; 1.280 in. Max lg; 0.470 in. Max w; 0.375 in. Max w; 5 turret type terminals 0.225 in. Lg; storeage temp range: m55.0 to p150.0 degrees celsius

Properties:

Two or more diode semiconductor devices designed to function as a unit in changing alternating current to direct current. The diode devices are internally connected in series, and are permanently cased, encapsulated, potted, or molded together to form an inseparable unit. These units may be designed as either half-wave or full-wave rectifiers and may be mounted to form either single phase or three phase bridges. For interconnected items arranged in stack(s), see rectifier, semiconductor device. For items fabricated in the form of a monolithic or thin film structure that perform the function of a circuit, see integrated circuit (as modified). Excludes semiconductor devices, unitized; semiconductor device assembly; and rectifier network, unitized.