Model: 2N697

Transistor

Special Features:

Junction pattern arrangement: npn

Properties:

Inclosure Material
Metal
Overall Length
0.250 inches
Terminal Length
0.625 inches
Overall Diameter
0.352 inches
Internal Configuration
Junction contact
Joint Electronic Device Engineering Council/jedec/case Outline Designation
To-205ad
Mounting Method
Terminal
Terminal Circle Diameter
0.200 inches
Features Provided
Hermetically sealed case
Semiconductor Material
Silicon
Voltage Rating In Volts Per Characteristic
40.0 collector to emitter voltage, dc and 60.0 collector to base voltage, dc
Current Rating Per Characteristic
500.00 milliamperes all primaries
Power Rating Per Characteristic
2.0 watts small-signal input power, common-collector absolute
Transfer Ratio
40.0 static forward current transfer ratio, common-emitter and 120.0 static forward current transfer ratio, common-emitter
Maximum Operating Tempurature Per Measurement Point
135.0 degrees celsius junction
Terminal Type And Quantity
3 insulated wire lead
NSN
5961-00-403-8386
Part Number
2N697
Description
Transistor
CAGE
01295

An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes semiconductor device, diode and semiconductor device, thyristor. For solid state devices which are responsive to visible or infrared radiant energy, see semiconductor device, photo.

Part 2N697 NSN 5961-00-403-8386

INC
FIIG
Concept No.
App. Key
Cond. Code
Status
INC:
20588
FIIG:
A110A0
Concept No.:
App. Key:
D
Cond. Code:
1
Status:
A

Material Classification

Hazardous material, precious metals, criticality, enviroment, and electrostatic discharge indicators
HMIC
PMIC
ESD/EMI
ENAC
MMAC
CRITL
HMIC:
N
PMIC:
A
ESD:
A
ESD:
A
MMAC:
CRITL:
X

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Schedule B and Export
  • Schedule B: 8541500080
  • SITC: 77639
  • End Use: Semiconductors
  • NAICS: 334413
  • USDA: 1

Freight Class: Semiconductor devices, nesoi

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