Model: 2N6909

Transistor

Special Features:

Hermetically sealed; military option; over-voltage protection; high performance jfet; 400 g fs min (us)

Properties:

Mounting Method
Terminal
Semiconductor Material
Silicon
Voltage Rating In Volts Per Characteristic
-2.3 gate to source voltage
Current Rating Per Characteristic
10.00 milliamperes forward gate current
Power Rating Per Characteristic
300.0 milliwatts collector power dissipation
Maximum Operating Tempurature Per Measurement Point
150.0 degrees celsius junction
Part Name Assigned By Controlling Agency
N-channel jfet circuit
Terminal Type And Quantity
4 uninsulated wire lead
NSN
5961-01-584-6369
Part Number
2N6909
Description
Transistor
CAGE
80131

An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes semiconductor device, diode and semiconductor device, thyristor. For solid state devices which are responsive to visible or infrared radiant energy, see semiconductor device, photo.

Part 2N6909 NSN 5961-01-584-6369

INC
FIIG
Concept No.
App. Key
Cond. Code
Status
INC:
20588
FIIG:
A110A0
Concept No.:
App. Key:
D
Cond. Code:
1
Status:
A

Material Classification

Hazardous material, precious metals, criticality, enviroment, and electrostatic discharge indicators
HMIC
PMIC
ESD/EMI
ENAC
MMAC
CRITL
HMIC:
N
PMIC:
A
ESD:
B
ESD:
B
MMAC:
CRITL:
X

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Schedule B and Export
  • Schedule B: 8541500080
  • SITC: 77639
  • End Use: Semiconductors
  • NAICS: 334413
  • USDA: 1

Freight Class: Semiconductor devices, nesoi

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