Model: 2N652

Transistor

Properties:

Inclosure Material
Metal
Overall Length
Between 0.240 inches and 0.260 inches
Terminal Length
1.500 inches
Overall Diameter
Between 0.335 inches and 0.370 inches
Internal Configuration
Junction contact
Internal Junction Configuration
Pnp
Mounting Method
Terminal
Terminal Circle Diameter
0.200 inches
Features Provided
Hermetically sealed case
Semiconductor Material
Germanium
Voltage Rating In Volts Per Characteristic
45.0 breakdown voltage, collector-to-base, emitter open and 30.0 breakdown voltage, collector-to-emitter, with specified resistance between base and emitter and 30.0 breakdown voltage, emitter-to-base, collector open
Current Rating Per Characteristic
500.00 milliamperes source cutoff current and 10.00 microamperes zero-gate-voltage source current preset
Power Rating Per Characteristic
200.0 milliwatts small-signal input power, common-collector
Terminal Type And Quantity
3 uninsulated wire lead
NSN
5961-00-691-3608
Part Number
2N652
Description
Transistor
CAGE
5V1P1

An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes semiconductor device, diode and semiconductor device, thyristor. For solid state devices which are responsive to visible or infrared radiant energy, see semiconductor device, photo.

Part 2N652 NSN 5961-00-691-3608

INC
FIIG
Concept No.
App. Key
Cond. Code
Status
INC:
20588
FIIG:
A110A0
Concept No.:
App. Key:
D
Cond. Code:
1
Status:
A

Material Classification

Hazardous material, precious metals, criticality, enviroment, and electrostatic discharge indicators
HMIC
PMIC
ESD/EMI
ENAC
MMAC
CRITL
HMIC:
N
PMIC:
A
ESD:
ESD:
MMAC:
CRITL:
X

Freight Classification

NMFC
UFC
LTL
LCL
WCC
TCC
SHC
ACC
NMFC:
063025
UFC:
34525
LTL:
RATING VARIABLE
LCL:
--
WCC:
658
TCC:
Z
SHC:
9
ACC:
Instruments/Radio

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Schedule B and Export
  • Schedule B: 8541500080
  • SITC: 77639
  • End Use: Semiconductors
  • NAICS: 334413
  • USDA: 1

Freight Class: Semiconductor devices, nesoi

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