Model: 2N6522

Transistor

Special Features:

Junction pattern arrangement: pnp

Properties:

Overall Length
Between 0.650 inches and 0.760 inches
Overall Diameter
Between 0.335 inches and 0.370 inches
Internal Configuration
Junction contact-darlington connected
Mounting Method
Terminal
Semiconductor Material
Silicon
Voltage Rating In Volts Per Characteristic
60.0 collector to base voltage/static/emitter open and 10.0 emitter to base voltage, static, collector open and 40.0 collector to emitter voltage/static/base open
Terminal Type And Quantity
3 uninsulated wire lead
Specification Data
80131-release6577 professional/industrial association standard
NSN
5961-01-222-5416
Part Number
2N6522
Description
Transistor
CAGE
80131

An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes semiconductor device, diode and semiconductor device, thyristor. For solid state devices which are responsive to visible or infrared radiant energy, see semiconductor device, photo.

Part 2N6522 NSN 5961-01-222-5416

INC
FIIG
Concept No.
App. Key
Cond. Code
Status
INC:
20588
FIIG:
A110A0
Concept No.:
App. Key:
D
Cond. Code:
1
Status:
A

Material Classification

Hazardous material, precious metals, criticality, enviroment, and electrostatic discharge indicators
HMIC
PMIC
ESD/EMI
ENAC
MMAC
CRITL
HMIC:
N
PMIC:
U
ESD:
A
ESD:
A
MMAC:
CRITL:
X

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Schedule B and Export
  • Schedule B: 8541500080
  • SITC: 77639
  • End Use: Semiconductors
  • NAICS: 334413
  • USDA: 1

Freight Class: Semiconductor devices, nesoi

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