Model: 2N650

Transistor

Special Features:

Junction pattern arrangement: pnp

Properties:

Overall Length
0.260 inches
Overall Height
0.260 inches
Overall Width
0.370 inches
Internal Configuration
Junction contact
Features Provided
Hermetically sealed case
Semiconductor Material
Germanium
Voltage Rating In Volts Per Characteristic
45.0 breakdown voltage, collector-to-base, emitter open
Current Rating Per Characteristic
500.00 milliamperes source cutoff current
Power Rating Per Characteristic
200.0 milliwatts small-signal input power, common-collector
Terminal Type And Quantity
3 insulated wire lead
Specification Data
80131-2n650 professional/industrial association standard
NSN
5961-00-448-6217
Part Number
2N650
Description
Transistor
CAGE
5V1P1

An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes semiconductor device, diode and semiconductor device, thyristor. For solid state devices which are responsive to visible or infrared radiant energy, see semiconductor device, photo.

Part 2N650 NSN 5961-00-448-6217

INC
FIIG
Concept No.
App. Key
Cond. Code
Status
INC:
20588
FIIG:
A110A0
Concept No.:
App. Key:
D
Cond. Code:
1
Status:
A

Material Classification

Hazardous material, precious metals, criticality, enviroment, and electrostatic discharge indicators
HMIC
PMIC
ESD/EMI
ENAC
MMAC
CRITL
HMIC:
N
PMIC:
U
ESD:
ESD:
MMAC:
CRITL:
X

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Schedule B and Export
  • Schedule B: 8541500080
  • SITC: 77639
  • End Use: Semiconductors
  • NAICS: 334413
  • USDA: 1

Freight Class: Semiconductor devices, nesoi

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