Model: 2N6421

Transistor

Properties:

Inclosure Material
Metal
Mounting Facility Quantity
2
Electrode Internally-electrically Connected To Case
Collector
Mounting Method
Unthreaded hole
Semiconductor Material
Silicon
Voltage Rating In Volts Per Characteristic
300.0 collector to emitter voltage/static/base open
Current Rating Per Characteristic
200.00 microamperes source cutoff current
Power Rating Per Characteristic
35.0 watts small-signal input power, common-collector absolute
Maximum Operating Tempurature Per Measurement Point
200.0 degrees celsius ambient air
NSN
5961-01-142-0071
Part Number
2N6421
Description
Transistor
CAGE
04713

An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes semiconductor device, diode and semiconductor device, thyristor. For solid state devices which are responsive to visible or infrared radiant energy, see semiconductor device, photo.

Part 2N6421 NSN 5961-01-142-0071

INC
FIIG
Concept No.
App. Key
Cond. Code
Status
INC:
20588
FIIG:
A110A0
Concept No.:
App. Key:
D
Cond. Code:
1
Status:
A

Material Classification

Hazardous material, precious metals, criticality, enviroment, and electrostatic discharge indicators
HMIC
PMIC
ESD/EMI
ENAC
MMAC
CRITL
HMIC:
N
PMIC:
A
ESD:
ESD:
MMAC:
CRITL:
X

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Schedule B and Export
  • Schedule B: 8541500080
  • SITC: 77639
  • End Use: Semiconductors
  • NAICS: 334413
  • USDA: 1

Freight Class: Semiconductor devices, nesoi

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